Li, X. F. et al. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. Sci. Adv. 9, eade5706 (2023). Article ADS CAS PubMed PubMed Central Google Scholar Zhang, X. et al. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy. Nat. Commun. 10, 598 (2019). Article ADS CAS PubMed PubMed Central
Li, X. F. et al. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. Sci. Adv. 9, eade5706 (2023).
Google Scholar
Zhang, X. et al. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy. Nat. Commun. 10, 598 (2019).
Google Scholar
Jiang, T. et al. Valley and band structure engineering of folded MoS2 bilayers. Nat. Nanotechnol. 9, 825–829 (2014).
Google Scholar
Femi-Oyetoro, J. et al. Structural stability of bilayer MoS2 in ambient air. Adv. Mater. Interfaces 8, 2101188 (2021).
Google Scholar
Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature 605, 69–75 (2022).
Google Scholar
Yang, T. H. et al. Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide. Nat. Electron. 7, 29–38 (2024).
Google Scholar
Bian, R. et al. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 385, 57–62 (2024).
Google Scholar
Zhang, Y. et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat. Nanotechnol. 9, 111–115 (2014).
Google Scholar
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
Google Scholar
Zhao, W. et al. Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. Nano Lett. 13, 5627–5634 (2013).
Google Scholar
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).
Google Scholar
Gao, Q. et al. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nat. Commun. 9, 4778 (2018).
Google Scholar
Li, H. et al. Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 8, 63–67 (2012).
Google Scholar
Amani, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 350, 1065–1068 (2015).
Google Scholar
Cao, Y. et al. Unconventional superconductivity in magic-angle graphene superlattices. Nature 556, 43–50 (2018).
Google Scholar
Wang, X. et al. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. Nat. Nanotechnol. 17, 367–371 (2022).
Google Scholar
Andersen, T. I. et al. Excitons in a reconstructed moiré potential in twisted WSe2/WSe2 homobilayers. Nat. Mater. 20, 480–487 (2021).
Google Scholar
Meng, P. et al. Sliding induced multiple polarization states in two-dimensional ferroelectrics. Nat. Commun. 13, 7696 (2022).
Google Scholar
Liu, K. et al. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers. Nat. Commun. 5, 4966 (2014).
Google Scholar
Hu, X., Kou, L. & Sun, L. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures. Sci. Rep. 6, 31122 (2016).
Google Scholar
Sung, J. et al. Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe2/MoSe2 bilayers. Nat. Nanotechnol. 15, 750–754 (2020).
Google Scholar
Paradisanos, I. et al. Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition. Nat. Commun. 11, 2391 (2020).
Google Scholar
Moon, S. et al. Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate. Nat. Mater. 24, 843–851 (2025).
Google Scholar
Stern, M. V. et al. Interfacial ferroelectricity by van der Waals sliding. Science 372, 1462–1466 (2021).
Google Scholar
Suzuki, R. et al. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. Nat. Nanotechnol. 9, 611–617 (2014).
Google Scholar
Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490–493 (2012).
Google Scholar
Mak, K. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photon. 10, 216–226 (2016).
Google Scholar
Shi, J. et al. 3R MoS2 with broken inversion symmetry: a promising ultrathin nonlinear optical device. Adv. Mater. 29, 1701486 (2017).
Google Scholar
Zhou, X. et al. Identification of polytypism and their dislocations in bilayer MoS2 using correlative transmission electron microscopy and Raman spectroscopy. npj 2D Mater. Appl. 9, 58 (2025).
Google Scholar
Wondratschek, H. in International Tables for Crystallography, Volume A: Space-group symmetry (ed. Hahn, T.) 587 (Springer, 2006).
Baek, J.-H. et al. Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers. Nat. Mater. 22, 1463–1469 (2023).
Google Scholar
Hong, J. et al. Direct imaging of kinetic pathways of atomic diffusion in monolayer molybdenum disulfide. Nano Lett. 17, 3383–3390 (2017).
Google Scholar
Kim, J. H. et al. Interface-driven partial dislocation formation in 2D heterostructures. Adv. Mater. 31, 1807486 (2019).
Google Scholar
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010).
Google Scholar
Zhang, S. C. et al. Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling. J. Lumin. 213, 388–394 (2019).
Google Scholar
Du, X. J. et al. Electronically weak coupled bilayer MoS2 at various twist angles via folding. ACS Appl. Mater. Interfaces 13, 22819–22827 (2021).
Google Scholar
Zhou, B. et al. A chemical-dedoping strategy to tailor electron density in molecular-intercalated bulk monolayer MoS2. Nat. Synth. 3, 67–75 (2024).
Google Scholar
Mitterreiter, E. et al. The role of chalcogen vacancies for atomic defect emission in MoS2. Nat. Commun. 12, 3822 (2021).
Google Scholar
Sallen, G. et al. Robust optical emission polarization in MoS2 monolayers through selective valley excitation. Phys. Rev. B 86, 081301 (2012).
Google Scholar
Lee, Y.-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320–2325 (2012).
Google Scholar
Kojima, K. et al. Restoring the intrinsic optical properties of CVD-grown MoS2 monolayers and their heterostructures. Nanoscale 11, 12798–12803 (2019).
Google Scholar
Sohn, W. et al. Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template. Nano Converg. 8, 11 (2021).
Google Scholar
Zhang, Y. et al. Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides. Sci. Adv. 10, eadk1874 (2024).
Google Scholar
Pedroza, L. S., da Silva, A. J. & Capelle, K. Gradient-dependent density functionals of the Perdew-Burke-Ernzerhof type for atoms, molecules, and solids. Phys. Rev. B 79, 201106 (2009).
Google Scholar
Bučko, T., Hafner, J., Lebègue, S. & Ángyán, J. G. Improved description of the structure of molecular and layered crystals: ab initio DFT calculations with van der Waals corrections. J. Phys. Chem. A 114, 11814–11824 (2010).
Google Scholar
Jin, W. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013).
Google Scholar
Jin, W. et al. Substrate interactions with suspended and supported monolayer MoS2: angle-resolved photoemission spectroscopy. Phys. Rev. B 91, 121409 (2015).
Google Scholar
Chuang, T.-H. et al. Performance of a photoelectron momentum microscope in direct- and momentum-space imaging with ultraviolet photon sources. J. Synchrotron Radiat. 31, 195–201 (2024).
Google Scholar
Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 7, 494–498 (2012).
Google Scholar
Koch, C. T. Determination of Core Structure Periodicity and Point Defect Density Along Dislocations. PhD thesis, Arizona State Univ. (2002).
Momma, K. & Izumi, F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J. Appl. Crystallogr. 44, 1272–1276 (2011).
Google Scholar
Hafner, J. Ab-initio simulations of materials using VASP: density-functional theory and beyond. J. Comput. Chem. 29, 2044–2078 (2008).
Google Scholar
Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).
Google Scholar
Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188–5192 (1976).
Google Scholar
Politzer, P. & Murray, J. S. The Hellmann-Feynman theorem: a perspective. J. Mol. Model. 24, 266 (2018).
Google Scholar
Ulian, G. & Valdrè, G. Structural, elastic, electronic, optical and vibrational properties of single-layered, bilayered and bulk molybdenite MoS2−2H. J. Appl. Crystallogr. 56, 611–623 (2023).
Google Scholar
Bussolotti, F., Kawai, H., Wong, S. L. & Goh, K. E. J. Protected hole valley states in single-layer MoS2. Phys. Rev. B 99, 045134 (2019).
Google Scholar
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